Hydrogenated amorphous silicon-germanium PIN x-ray detector
Journal
IEEE Transactions on Electron Devices
Journal Volume
48
Journal Issue
8
Pages
1564-1567
Date Issued
2001
Author(s)
Abstract
The hydrogenated amorphous silicon-germanium (a-Si/sub 1-x/Ge/sub x/:H) pin X-ray detector has been fabricated successfully. It is found by introducing germanium into the amorphous silicon film, the X-ray detection efficiency is almost twice improved. This is due to the fact that the energy gap of a-Si/sub 1-x/Ge/sub x/:H is smaller than that of a-Si:H.
SDGs
Type
journal article