Sidewall smoothing of Si/SiO2 waveguide by excimer laser reformation
Journal
2007 International Nano-Optelectronics Workshop, iNOW
Pages
214-215
Date Issued
2007
Author(s)
Abstract
Smoothing as-etched Si/SiO 2 waveguides by laser illumination results in less damage than furnace-treated one and atomic-force-microscopy measurement on the reformed surface gives root-mean-square roughness of 0.24 nm and leads to 0.04 dB/cm of calculated scattering loss.
Type
conference paper