Carrier Transport in Different Orientation on Semiconductor.
Date Issued
2007
Date
2007
Author(s)
Pan, Chin-Hsun
DOI
zh-TW
Abstract
In the present semiconductor technology, CMOS circuit are typically fabricated on (100) silicon substrates with <110> channel direction. In order to improve the carrier mobility in devices, we attempt to find out the highest mobility in different orientation on semiconductor.
In this thesis, we define the channel direction and measure the carrier mobility by Hall bar measurement. The different mobility in several directions is measured from 100K to 300K. The experimental results can be interpreted by the effective mass along different directions, and the agreement with theoretical calculation is quite well.
From the hall measurement in different orientation, <100> direction has much higher carrier mobility and is favorable for electronic devices.
Subjects
方向性
移動率
霍爾效應
霍爾棒
orientation
mobility
Hall bar
Hall Effect
Type
thesis
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