Electronic and atomic structures of Si-C-N thin film by X-ray-absorption spectroscopy
Journal
Journal of Electron Spectroscopy and Related Phenomena
Journal Volume
92
Journal Issue
1-3
Pages
115-118
Date Issued
1998
Author(s)
Abstract
This study measures X-ray absorption spectra of crystalline (c)-Si-C-N thin film at the C and Si K-edge using the sample drain current mode, and at the N K-edge using the fluorescent mode. A resonance peak resembling the C 1s core exciton in CVD-diamond/Si is observed, and a broad feature occurring in the energy range between ∼290 and 300 eV can be assigned to the antibonding C 2p-Si 3sp hybridized states and the C 2p-N 2sp hybridized states as well. Analysis of the N K-edge near edge absorption spectra reveals a similar feature in c-Si-C-N and a-Si3N4, suggesting that nitrogen atoms generally have similar local environment in these two materials. Moreover, results obtained from Si K-edge absorption spectra for c-Si-C-N demonstrate a proportional combination of local Si-N and Si-C bonds, associated with the local tetrahedral C-Si-N3 as well as the long-range ordered atomic structure around Si atoms. © 1998 Elsevier Science B.V. All rights reserved.
Subjects
Core exciton;Extended X-ray absorption fine structure (EXAFS);Hybridized states;first-principles calculations;Thin film;X-ray absorption near-edge structure (XANES)
SDGs
Other Subjects
Absorption spectroscopy;Crystal atomic structure;Electron energy levels;Electronic structure;Silicon compounds;Thin films;Core exciton;Extended X ray absorption fine structure;Hybridized states;X ray absorption near edge structure;X ray spectroscopy
Type
journal article