Improving device efficiencies of solid-state white light-emitting electrochemical cells by adjusting the emissive-layer thickness
Journal
Organic Electronics: physics, materials, applications
Journal Volume
14
Journal Issue
10
Pages
2424-2430
Date Issued
2013
Author(s)
Abstract
Exciton quenching in the recombination zone close to electrochemically doped regions would be one of the bottlenecks for improving device efficiencies of solid-state white light-emitting electrochemical cells (LECs). To further enhance device efficiencies of white LECs for practical applications, we adjust the emissive-layer thickness to reduce exciton quenching. In white LECs with properly thickened emissive-layer thickness, the recombination zone can be situated near the center of the emissive layer, rendering mitigated exciton quenching and thus enhanced device efficiencies. High external quantum efficiencies and power efficiencies of optimized devices reach ca. 11% and 20 lm/W, respectively, which are among the highest reported for white LECs. These results confirm that tailoring the thickness of the emissive layer to avoid exciton quenching would be a feasible approach to improve device efficiencies of white LECs. © 2013 Elsevier B.V.
SDGs
Type
journal article