On-chip fabrication of well-aligned and contact-barrier-free GaN nanobridge devices with ultrahigh photocurrent responsivity
Journal
Small
Journal Volume
4
Journal Issue
7
Pages
925-929
Date Issued
2008
Author(s)
Chen, R.-S.
Wang, S.-W.
Lan, Z.-H.
Tsai, J.T.-H.
Wu, C.-T.
Chen, K.-H.
Huang, Y.-S.
Chen, C.-C.
Abstract
Building nanobridges: Direct integration of an ensemble of GaN nanowires (n) onto a microchip produces a viable nanobridge (NB) device with good alignment and contact performance, the design of which demonstrates the potential of nanowires for sensor development. These GaN NBs have strong surface-enhanced photoconductivity with ultrahigh responsivity (see graph).
Publisher
John Wiley & Sons, Inc.
Type
journal article