GaAs-Based metal-oxide semiconductor field-effect transistors with Al2O3 gate dielectrics grown by atomic layer deposition
Journal
Journal of electronic materials
Journal Volume
33
Journal Issue
8
Pages
912-915
Date Issued
2004
Author(s)
URI
Abstract
We demonstrate GaAs-based, metal-oxide-semiconductor field-effect transistors (MOSFETs) with excellent performance using an Al2O 3 gate dielectric, deposited by atomic layer deposition (ALD). This achievement is very significant/because Al2O3 possesses highly desirable physical and electrical properties as a gate dielectric. These MOSFET devices exhibit extremely low gate-leakage current, high transconductance, and high dielectric breakdown strength. A short-circuit, current-gain, cutoff frequency (fT) of 14 GHz and a maximum oscillation frequency (fmax) of 25.2 GHz have been achieved from a 0.65-μm gate-length device. The interface trap density (Dit) of Al2O3/GaAs is evaluated by the hysteresis of drain-source current, Ids, versus gate-source bias, Vgs, and the frequency dispersion of transconductance, gm.
SDGs
Type
journal article