A V-band quasi-optical GaAs HEMT monolithic integrated antenna and receiver front end
Journal
IEEE Transactions on Microwave Theory and Techniques
Journal Volume
51
Journal Issue
12
Pages
2461--2468
Date Issued
2003
Author(s)
Abstract
A single-chip monolithic integrated V-band folded-slot antenna with two Schottky-barrier diodes and a local oscillator source is developed as a quasi-optical receiver for the first time. The monolithic microwave integrated circuit consists of a voltage-controlled oscillator (VCO), a coplanar waveguide (CPW)-to-slotline transition, a low-pass filter, a folded-slot antenna, and a 180° single balanced mixer. The chip is fabricated based on the 0.15-μm GaAs high electron-mobility transistor technology and the overall chip size is 3 × 1.5 mm2. A finite-difference time-domain method solver is also developed for analyzing the embedded impedance characteristics of the folded-slot antenna to design the mixer. The chip is placed on an extended hemispherical silicon substrate lens to be a quasi-optical receiver. The performance of the receiver is verified by experimental measurements. The VCO has achieved a tuning range from 61.9 to 62.5 GHz and approximately 9.3-dBm output power. The CPW-to-slotline transition has bandwidth from 50 to 70 GHz. The mixer results in 15-dB single-sideband conversion loss and the receiving patterns of the IF power are also measured.
SDGs
Other Subjects
Coplanar waveguides (CPWs); MMIC oscillators; Monolithic-microwave integrated-circuit (MMIC) mixers; Slot antennas; Slotline
Type
journal article