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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Influence of the thickness variation of the SiOx layer on the Si quantum dots based MOSLED
Details
Influence of the thickness variation of the SiOx layer on the Si quantum dots based MOSLED
Journal
Proceedings of SPIE - The International Society for Optical Engineering
Journal Volume
7987
Date Issued
2011
Author(s)
Lai, B.-H.
Cheng, C.-H.
GONG-RU LIN
DOI
10.1117/12.889947
URI
https://scholars.lib.ntu.edu.tw/handle/123456789/500366
URL
https://www.scopus.com/inward/record.uri?eid=2-s2.0-79953011381&doi=10.1117%2f12.889947&partnerID=40&md5=5ea2c5114b6ac7c95df5df773551b29d
Type
conference paper