Experimental and theoretical study of the electronic structures of Ni 3Al, Ni 3Ga, Ni 3In, and NiGa
Journal
Journal of Applied Physics
Journal Volume
92
Journal Issue
3
Pages
1419-1424
Date Issued
2002
Author(s)
Abstract
The electronic structures of Ni 3Al, Ni 3Ga, Ni 3In, and NiGa are studied by x-ray absorption near-edge spectra (XANES) at the Ni and Ga K edges. The XANES spectra are compared with those calculated with theory. The experimental XANES features for these compounds reflect the Ni- and Ga-p unoccupied density of states. The calculated magnetic moments for Ni 3Al, Ni 3Ga, and Ni 3In are between 0.7-0.8μ B/cell. The number of 3d holes per Ni atom is calculated for Ni 3Al, Ni 3Ga, and Ni 3In. These numbers show correlation with heats of formation of the bulk compounds. © 2002 American Institute of Physics.
Type
journal article