Influence of high indium composition InGaN on lattice matched ZnO sacrificial substrates
Journal
Journal of Light and Visual Environment
Journal Volume
32
Journal Issue
2
Pages
143-147
Date Issued
2008
Author(s)
Li, N.
Wang, S.-J.
Park, E.-H.
Feng, Z.C.
Tsai, H.-L.
Yang, J.-R.
Valencia, A.
Nause, J.
Summers, C.
Ferguson, I.
Abstract
MOCVD growth of InGaN on ZnO substrates has achieved indium concentration as high as 43% as observed by high-resolution X-ray diffraction (HRXRD). The uniqueness of this finding is the absence of phase separation and the higher indium incorporation compared to growth on thick GaN/sapphire. Transmission electron microscopy (TEM) shows perfectly matched GaN and ZnO lattices. In addition, atomic layer deposition (ALD) transition layers have been grown in order to provide a transition layer on ZnO substrates to block Zn diffusion and allow for future substrate removal for thin nitride fabrication.
SDGs
Type
journal article