Growth of GaAs-based 1.3 μm InAs/InGaAs Quantum Dots and Lasers by Molecular Beam Epitaxy
Date Issued
2004
Date
2004
Author(s)
Chang, Fu-Yu
DOI
zh-TW
Abstract
In this disseration, high quality 1300 nm InAs/InGaAs quantum dots (QDs) and QD lasers grown by gas-source molecular-beam epitaxy (GSMBE) and solid-source molecular-beam epitaxy (SSMBE) were studied.
The growth condition for QDs with emission wavelength at 1.3 μm was systematically investigated by GSMBE on (100) GaAs substrates. InAs QDs grown at V/III ratio ~ 2 show the best structural and optical properties. After depositing InGaAs capping layer on top of the InAs QDs, the resultant InAs/InGaAs QDs have longer emission wavelength, stronger photoluminescence (PL) intensity, and narrower PL linewidth. It is also found that the growth condition of the InAs QDs could affect the quality of the InAs/InGaAs QDs significantly. With different deposition methods for the InGaAs capping layer, namely sub-monolayer migration-enhanced epitaxy (SMEE), sub-monolayer deposition (SMD) and traditional MBE deposition, the dot density of InAs/InGaAs QDs ranging from 2.3
Subjects
量子點
分子束磊晶
molecular beam epitaxy
quantum dot
Type
thesis