A high efficient 820 nm MOS Ge quantum dot photodetector
Journal
IEEE Electron Device Letters
Journal Volume
24
Journal Issue
5
Pages
318-320
Date Issued
2003
Author(s)
Abstract
A Ge quantum dot photodetector has been demonstrated using a metal-oxide-semiconductor (MOS) tunneling structure. The oxide film was grown by liquid phase deposition (LPD) at 50°C. The photodetector with five-period Ge quantum dot has responsivity of 130, 0.16, and 0.08 mA/W at wavelengths of 820 nm, 1300 nm, and 1550 nm, respectively. The device with 20-period Ge quantum dot shows responsitivity of 600 mA/W at the wavelength of 850 nm. The room temperature dark current density is as low as 0.06 mA/cm2. The high performance of the photodetectors at 820 nm makes it feasible to integrate electrooptical devices into Si chips for short-range optical communication.
SDGs
Type
journal article