A high efficient 820 nm MOS Ge quantum dot photodetector

Journal

IEEE Electron Device Letters

Journal Volume

24

Journal Issue

5

Pages

318-320

Date Issued

2003

Author(s)

Hsu, B.-C.

Chang, S.T.

Chen, T.-C.

Kuo, P.-S.

Chen, P.S.

Pei, Z.

DOI

10.1109/LED.2003.812558

URI

http://www.scopus.com/inward/record.url?eid=2-s2.0-0042674248&partnerID=MN8TOARS

http://scholars.lib.ntu.edu.tw/handle/123456789/303372

Type

journal article