Effect of Silicon Dopant on the Performance of InAs/GaAs Quantum-Dot Infrared Photodetectors
Journal
Japanese Journal of Applied Physics, Part 2: Letters
Journal Volume
43
Journal Issue
2A
Pages
L167-L169
Date Issued
2004
Author(s)
Abstract
Ten-stacked self-assembled InAs/GaAs quantum-dot infrared photodetectors (QDIP) with and without silicon dopant in the InAs quantum-dot structure are investigated. Higher responsivity is observed for doped QDIP due to its higher electron occupancy at the ground state. Photovoltaic response, asymmetric photocurrent and higher activation energy for doped QDIP are attributed to the built-in electrical field and higher impurity scattering for dark current that resulted from the creation of a slightly asymmetric potential profile in doped QDIP by the ionized donor source in the wetting layer.
Subjects
Infrared photodetectors; QDIP; Quantum dots
SDGs
Other Subjects
Activation energy; Electrons; Ground state; Infrared detectors; Ionization; Photovoltaic effects; Semiconducting gallium arsenide; Semiconductor doping; Semiconductor quantum dots; Silicon; Infrared photodetectors; Quantum-dot infrared photodetectors (QDIP); Indium compounds
Type
journal article