The Growth Mechanism and Electrical Characteristics of p-n Junction Silicon Nanowires
Date Issued
2008
Date
2008
Author(s)
Ting-Hsiang, Hung
Abstract
Electric-field-directed growth and self-assembly of n-type, p-type, and p-n junction silicon nanowires by chemical-vapor deposition via the vapor-liquid-solid (VLS) growth mechanism in a low pressure chemical vapor deposition (LPCVD) system is demonstrated. The growth mechanism and electrical characteristics of p-n junction SiNWs are demonstrated. The technique of sample preparation to eliminate the noise for I-V measurement is discussed. Repeated and optical I-V measurement of p-n SiNWs islso demonstrated in this thesis. Electrostatic force microscopy (EFM) is used to spatially define the position of junction in the p-n junction SiNW.
Subjects
silicon
Si
nanowire
Si nanowires
p-n junction
p-n
Type
thesis
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