Influence of low temperature oxidation and nitrogen passivation on the MOS interface of C-face 4H-SiC

Journal

Applied Surface Science

Journal Volume

282

Pages

126-132

Date Issued

2013

Author(s)

Lee, K.-Y.

Chang, Y.-H.

Huang, Y.-H.

Wu, S.-D.

Chung, C.Y.

Huang, C.-F.

Lee, T.-C.

DOI

10.1016/j.apsusc.2013.05.080

URI

http://www.scopus.com/inward/record.url?eid=2-s2.0-84880927496&partnerID=MN8TOARS

http://scholars.lib.ntu.edu.tw/handle/123456789/376992

Type

journal article