Indium and nitrogen K-edge X-ray absorption spectroscopy of In x Ga 1-x N
Journal
2016 5th International Symposium on Next-Generation Electronics, ISNE 2016
Date Issued
2016
Author(s)
Li, X.
Chang, C.M.
Hsueh, C.-H.
Lee, Z.-F.
Chen, J.-M.
Lin, H.-H.
Wang, X.
Dietz, N.
Guan, Y.-J.
Feng, Z.C.
Abstract
InGaN thin films with near entire indium composition range have been successfully grown on GaN/sapphire (0001) by molecular beam epitaxy (MBE). Samples are studied by X-ray absorption fine structure (XAFS) and X-ray absorption near-edge structure (XANES), respectively. They are all obtained with smooth data. Based on JFEFF calculation program, the Nitrogen K-edge X-Ray absorption energy is about 400eV, which matches with the measurement data.
SDGs
Type
conference paper