Further Emission Enhancement in Surface Plasmon Coupling with an InGaN/GaN Quantum Well with a Dielectric Layer Inserted between Metal and Semiconductor
Journal
The 8th International Conference on Nitride Semiconductors
Date Issued
2009-10
Author(s)
Cheng-Hung Lin
Yen-Cheng Lu
Fu-Ji Tsai
Jyh-Yang Wang
Cheng-Yen Chen
Yean-Woei Kiang
C. C. Yang
Type
conference paper