Effects of slurry formulations on chemical-mechanical polishing of low dielectric constant polysiloxanes: Hydrido-organo siloxane and methyl silsesquioxane
Journal
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Journal Volume
18
Journal Issue
1
Pages
201-207
Date Issued
2000
Author(s)
Yen, Cheng-Tyng
Abstract
The chemical mechanical polishing behaviors of hydrid-organo siloxane and methyl silsesquioxane was studies. The influence of abrasives, surfactants and pH values on the removal rates and surface properties of the films were investigated. No significant scratches was observed on the films using Al slurry, unlike the 8104 slurry. The surfactant greatly improved contact area between the film surface and the slurry, and affected the removal rate by modifying the surface interaction, charge status and polarity of the abrasive.
SDGs
Type
journal article