Thermal Dynamic Performance and Integrated Optoelectronic System with InGaP/GaAs Quantum Well Light-Emitting Transistors (LETs)
Journal
Asia Communications and Photonics Conference, ACP
Journal Volume
2021-October
Date Issued
2021
Author(s)
Abstract
The study investigates the DC characteristics and the optical output from room temperature to 358K. The current gain of the LET with triple QWs improves 146.62�?which is desired for high resolution temperature sensor. © Optica Publishing Group 2021, © 2021 The Author(s)
Other Subjects
Light emission; Optoelectronic devices; Semiconductor quantum wells; Current gains; DC characteristics; Dynamic performance; GaAs quantum wells; High resolution; InGaP-GaAs; Light-emitting transistors; Optical output; Thermal dynamics; Gallium compounds
Type
conference paper