Enhancement in field emission of silicon microtips by bias-assisted carburization
Journal
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Journal Volume
18
Journal Issue
6
Pages
2722-2729
Date Issued
2000
Author(s)
Abstract
The deposition of ultrathin carbon layers on silicon microtips was implemented by bias-assisted carburization (BAC) using microwave plasma chemical vapor deposition technique. BAC process was performed at low pressure and low deposition temperature. The high emission current, low temperature and large-area growth capability of the BAC silicon microtip emitter were investigated.
SDGs
Other Subjects
Carbon;Characterization;Deposition;Electric potential;Plasma enhanced chemical vapor deposition;Silicon;Bias-assisted carburization (BAC);Field emission;Silicon microtips;Carburizing
Type
journal article