Development of Thermal Imprinting Process for Low Residual Layer and Applications
Date Issued
2015
Date
2015
Author(s)
Weng, Shih-Wei
Abstract
In recent years, imprinting of large-area micro and nanostructures have been widely used in many products, such as monitor, solar panel and bio-sensor etc. However, the removal of the residual layer after the imprinting is complicated and time-consuming. Most are processed using a reactive ion etching (RIE) or electron-beam (E-beam) lithography post processing step. Therefore, to imprint micro and nanostructures without the residual layer in a simple and inexpensive way is a big challenge. This research is devoted to developing an imprinting process which can reduce the residual layer. There are three main topics in this research: the development of the low residual layer imprinting, test of the imprinting process on the pyramid structures, and the application of this process on the imprinting of array of column and cone-shaped structures with low residual layer. First of all, we chose a simple microstructure (v-cut) and a proper resin for the development of this process. After investigating the relationship between the resin, temperature and pressure, we developed the heating wet transfer process, the pressure squeezed the resin from the convex surface into the concave of the mold, and the heat solidified the whole resin in the cavity. Then, we investigated the effects of spin-coating and the pressure on reducing the residual layer. With above parameters, the process of low residual layer imprinting v-cut microstructures has been developed. Second, we applied the process on the pyramid structures to prove that the process could be widely use on different mold. The pyramid structures mold was fabricated by lithography method. We successfully formed the pyramids with low residual layer with our process and compared the parameters on different mold imprinting. Lastly, the pattern sapphire substrates (PSS) has been chosen as the master mold on our process as the application. After discussion of the relationship between the imprinting pressure and the residual layer thickness, we successfully imprinted the structure with the residual lower than 200 nm with the process.
Subjects
microimprinting
the residual layer
pattern sapphire substrate
Type
thesis
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