InAs/GaAs Quantum Dot Injection Lasers
Journal
Optics InfoBase Conference Papers
ISBN
1557525250
Date Issued
1998-01-01
Author(s)
Grundmann, M.
Ledentsov, N. N.
Heinrichsdorff, F.
Bimberg, D.
Ustinov, V. M.
Kop'ev, P. S.
Alferov, Zh L.
Lott, J. A.
Abstract
Semiconductor diode lasers are presented whose active medium consists of quantum dots (QDs). Laser operation is based on zero-dimensionally localized carriers. High density arrays of uniform QDs are fabricated using epitaxy in the Stranski-Krastanow growth mode. Edge emitting and vertical cavity surface emitting lasers have been fabricated with some of their properties already exceeding the performance of conventional semiconductor diode lasers based on quantum wells.
Subjects
Laser theory | Quantum dots | Semiconductor lasers | Vertical cavity surface emitting lasers
Type
conference paper