A monolithic 1.57/5.25-GHz concurrent dual-band low-noise amplifier using InGap/GaAs HBT technology
Journal
Microwave and Optical Technology Letters
Journal Volume
42
Journal Issue
1
Pages
58-60
Date Issued
2004
Author(s)
Abstract
A monolithic concurrent dual-band low-noise amplifier (LNA) using InGaP/GaAs HBT technology is demonstrated for the first time. The LNA provides narrowband gain and matching simultaneously at both 1.57-GHz (GPS) and 5.25-GHz (ISM) bands. It consumes only 15-mW power and achieves transducer gains (S 21) of 25.3 and 14.3 dB, input return losses (S11) of 6.8 and 11.5 dB, reverse isolation (S12) of -30.8 and -32.2 dB, and noise figures of 2.55 and 4.5 dB at these two bands, respectively. The performance at 5.25 GHz is comparable with the 2.45/5.25-GHz concurrent dual-band CMOS LNA with a bonding wire as the gate inductor using 0.35-μm CMOS technology. © 2004 Wiley Periodicals, Inc.
SDGs
Type
journal article