Edge Termination Structures for 3.3 kV 4H-SiC Devices
Journal
2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020
ISBN (of the container)
9781728159553
ISBN
9781728159553
Date Issued
2020-09-23
Author(s)
DOI
10.1109/WiPDAAsia49671.2020.9360283
Abstract
In this paper, the edge termination (ET) for 3.3 kV 4H-SiC power devices was designed. The proposed structure is referred to as Ring-Assisted Double-Zone Junction Termination Extension (RA-DZ-JTE). The RA-DZ-JTE can greatly reduce the peak of electric fields at the corners and edges of the power device, resulting in a superior breakdown voltage (BV). The simulation results demonstrate that the BV is over 3.9 kV and the sensitivity of BV to JTE dose is lower in a relatively low JTE dose condition.
Event(s)
2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020, Suita, 23 September 2020 through 25 September 2020. Code 167423
Subjects
4H-SiC
breakdown voltage (BV)
edge termination (ET)
ring-assisted double-zone junction termination extension (RA-DZ-JTE)
Publisher
IEEE
Type
conference paper