SiGe power heterojunction bipolar transistors (HBTs) fabricated by fully self-aligned double mesa technology
Journal
IEEE MTT-S
Pages
1709-1712
Date Issued
2001-05
Author(s)
L.-H. Lu
S. Mohammadi
Z. Ma
G. E. Ponchak
S. A. Alterovitz
K. M. Strohm
J.-K. Luy
P. Bhattacharya
L. P. B. Katehi
Abstract
Multi-finger SiGe HBT's have been fabricated using a novel fully self-aligned double-mesa technology. With the advanced process technology, a maximum oscillating frequency (f/sub max/) of 78 GHz and a cut-off frequency (f/sub T/) of 37 GHz were demonstrated for a common-emitter device with emitter area of 2/spl times/2/spl times/30 /spl mu/m/sup 2/. For class-A operations, 10-finger devices (A/sub E/=2/spl times/2/spl times/30 /spl mu/m/sup 2/) exhibit an output power of 24.13 dBm with a maximum power added efficiency (PAE) of 26.9% at 8.5 GHz.
SDGs
Type
conference paper