SiGe power heterojunction bipolar transistors (HBTs) fabricated by fully self-aligned double mesa technology
Journal
IEEE MTT-S
Pages
1709-1712
Date Issued
2001-05
Author(s)
L.-H. Lu
S. Mohammadi
Z. Ma
G. E. Ponchak
S. A. Alterovitz
K. M. Strohm
J.-K. Luy
P. Bhattacharya
L. P. B. Katehi
SDGs
Type
conference paper