Dependence of spectral behavior in an InGaN/GaN quantum-well light-emitting diode on the prestrained barrier thickness

Journal

Journal of Applied Physics

Journal Volume

104

Journal Issue

4

Date Issued

2008

Author(s)

CHIH-CHUNG YANG

Lu, C.-F.

Huang, C.-F.

Chen, Y.-S.

CHIH-CHUNG YANG

DOI

10.1063/1.2973456

URI

http://www.scopus.com/inward/record.url?eid=2-s2.0-50849123450&partnerID=MN8TOARS

http://scholars.lib.ntu.edu.tw/handle/123456789/339007

Type

journal article