Electrical and Optical Properties of SiGe Heterostructure with Wrinkled Pattern

As the semiconductor technology has been developed from 90 nm strained-silicon technology, 45 nm high-k metal gate technology to the fin-FET technology which is developed in recent years, meaning there is a bottleneck of the device scaling down. It’s expected that changes device structure is a method to follow Moore''s Law. So a lot of researches about carbon nanotubes, a resonant tunneling device, single-electron transistors, and spintronics which is expected to replace conventional CMOS technology has been published. In this thesis, we introduce a device with different proportions of SiGe heterostructure, different strain relaxation of which induces periodic wrinkled pattern when strain release. And the IV characteristic of this device is similar to PN diode. However, its symmetrical structure performs a bi-directional conductance characteristics. Besides, this device is grown on a silicon wafer, and is integrated in Si-based CMOS technology and rectifier device applied in circuits. Furthermore, we can easily change minor structure in the process, such technique is also expected to be applied to develop new device.