Direct Indication of Interface Trap States in an Mos Capacitor From the Peaks of Optical illumination-induced Capacitances
Journal
Journal of the Chinese Institute of Engineers, Transactions of the Chinese Institute of Engineers,Series A/Chung-kuo Kung Ch'eng Hsuch K'an
Journal Volume
10
Journal Issue
4
Pages
429-434
Date Issued
1987
Author(s)
Abstract
An optical illumination method was used to examine the relationship between the variation of capacitance and the interface trap states of an MOS capacitor after various charge-temperature agings. The peaks in the illumination-induced capacitance-voltage curves were found to be caused neither by the lateral nonuniformities of interface charges nor by the nonuniformities of the illumination intensities, but by the existence of interface trap states. This can be used as a quick method to directly identify the interface trap states. © 1987 Taylor & Francis Group, LLC.
Type
journal article