Quantum dot formation in InGaN/GaN quantum well structures with silicon doping and the mechanisms for radiative efficiency improvement
Journal
Physica Status Solidi C: Conferences
Journal Issue
4
Pages
1093-1096
Date Issued
2003
Author(s)
Cheng, Y.-C.
Feng, S.-W.
Lin, E.-C.
Yang, C.-C.
Tseng, C.-H.
Cheng, H.
Ma, K.-J.
Type
conference paper