Model for Band-Edge Electroluminescence from Metal-Oxide-Semiconductor Silicon Tunneling Diodes
Journal
Journal of Applied Physics
Journal Volume
90
Journal Issue
2
Pages
789-793
Date Issued
2001
Date
2001
Author(s)
Abstract
A detailed model is proposed to explain the electroluminescence spectrum from metal-oxide-silicon tunneling diodes. This model includes phonon-assisted processes and exciton involvement. According to this model, the main peak and the low-energy tail of the electroluminescence spectrum are attributed to the transverse optical phonon and the two-phonon assisted recombination, respectively. With very few fitting parameters, the model accurately predicts the measured electroluminescence spectra. © 2001 American Institute of Physics.
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Type
journal article
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