An ultra-low voltage UWB CMOS low noise amplifier
Journal
Asia-Pacific Microwave Conference, APMC
Journal Volume
1
Pages
313-316
Date Issued
2006
Author(s)
Abstract
This paper presents an ultra-low voltage UWB LNA in a commercial 0.18μm CMOS technology. The technique of inductive degeneration is used in a two-stage conventional distributed amplifier to achieve broadband and low noise. The common source single-stage amplifier is cascaded to the conventional distributed amplifier to improve the gain at high frequency. The measured gain of the integrated LNA is 10dB with the 3dB bandwidth from 2.7 to 9.1 GHz. The average noise figure is 4.65dB and the IIP3 is 0dBm. Operated at 0.6V, the UWB CMOS LNA consumes 7mW. Copyright 2006 IEICE.
SDGs
Type
conference paper