Photoluminescence enhancement study in a Bi-doped Cs2AgInCl6double perovskite by pressure and temperature-dependent self-trapped exciton emission
Journal
Dalton Transactions
Journal Volume
51
Journal Issue
5
Pages
2026-2032
Date Issued
2022
Author(s)
Abstract
Here, we report a halide precursor acid precipitation method to synthesize Cs2AgIn1-xBixCl6 (x = 0, 0.02, 0.04, 0.08, 0.16, 0.32, 0.64, and 1) microcrystals. Cs2AgInCl6 and Bi derivative double perovskites show broadband white light emission via self-trapped excitons (STEs) and have achieved the highest internal quantum efficiency of up to 52.4% at x = 0.08. Synchrotron X-ray diffraction confirmed the linear increase of lattice parameters and cell volume with Bi3+ substitution at In3+ sites. Absorbance, photocurrent excitation, and photoluminescence excitation spectra are used to observe possible transitions from the valence to the conduction band or free exciton (FE) states as well as transitions within local Bi3+ states. The broadband photoluminescence is quenched via a single nonradiative process with an activation energy ΔE = 1490 cm-1 for Cs2AgIn0.92Bi0.08Cl6. Under normal conditions, we observed STE emission, but applying external pressure alters the electronic structure such that at elevated pressure, the only emission via the FE state is observed. We anticipate that structure, temperature and pressure-dependent photoluminescence studies will help the future use of a single-source lead-free double perovskite for white light-emitting diode applications.
Subjects
Activation energy
Bismuth compounds
Chlorine compounds
Electronic structure
Indium compounds
Perovskite
Photoluminescence
Precipitation (chemical)
X ray diffraction
Bi-doped
Double perovskites
Exciton emission
Exciton state
Free excitons
Photoluminescence enhancement
Pressure and temperature
Pressure dependent
Self trapped excitons
Temperature dependent
Excitons
Type
journal article