GaAs MOSFETs with in situ Y2O3 dielectric: attainment of nearly thermally limited subthreshold slope and enhanced drain current via accumulation

Journal

Japanese Journal of Applied Physics

Journal Volume

62

Journal Issue

12

Start Page

121002

ISSN

0021-4922

1347-4065

Date Issued

2023-12-01

Author(s)

J. Liu

L. B. Young

Y. H. G. Lin

H. W. Wan

Y. T. Cheng

J. Kwo

DOI

URI

Subjects

depletion-mode GaAs MOSFET

drain current enhancement

high-κ dielectric

subthreshold slope

SDGs

[SDGs]SDG7

Publisher

IOP Publishing

Type

journal article