Optical research of beryllium chalcogenides II-VI semiconductors : Cd1-x-yZnxBeySe
Date Issued
2006
Date
2006
Author(s)
Tsai, Wen-Ching
DOI
en-US
Abstract
The wurtzite-type Cd1-x-yZnxBeySe crystals grown by the high-pressure Bridgman method were investigated here. First, we performed the photoluminescence (PL) spectra to ascertain the band gap information. Next, we measured the Raman spectra and discussed the results with the modified random-element-isodisplacement (MREI) model and the spatial correlation (SC) model. The experimental results are in good agreement with these two theoretical models. Finally, a method based on the continuous exposure of the electron beam of cathodoluminescence (CL) measurement was introduced to recognize the aging characteristics of these samples. The results show that in order to improve the degradation problem, the incorporation of beryllium content in II-VI compounds should be less than 10%. In addition, we demonstrate that CL image is a very powerful tool to reveal the generation of defects of an optoelectronic solid under external perturbation.
Subjects
II-VI半導體
CdZnBeSe
quaternary
Type
thesis
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