Ultrasonic Assisted Mechanochemical Polishing of Silicon Carbide
Date Issued
2009
Date
2009
Author(s)
Huang, Chao-Wei
Abstract
Silicon carbide (SiC) ceramic had been wildly used in wear and corrosion resistance because of excellent mechanical and chemical properties. For the past few years, it was also used in optical component and semi-conductor industry, and therefore been requested its polishing efficiency and surface quality. The mechanochemical polishing (MCP) process uses soft abrasive to polish hard workpiece without micro scratch and subsurface damage, and has no recycle problem of chemical slurry. But its polishing efficiency still need to improve. In order to improve its polishing efficiency, this study proceeds a MCP experiment of sintered SiC with self-designed ultrasonic assisted apparatus, and confirms the possibility of enhancing its polishing efficiency with ultrasonic vibration. And this study selects the parameters such as processing pressure, workpiece speed and ultrasonic power to clarify the influence of ultrasonic vibration on material removal quantity, surface roughness and removal mechanism. The result of study shows that the ultrasonic vibration can effectively improve polishing efficiency, and the material removal quantity increased about 60~70%. The effect is more obvious under higher processing pressure, and the increasing of material removal quantity appears positive correlation with ultrasonic power.
Subjects
ultrasonic
mechanochemical polishing
silicon carbide
Type
thesis
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