Field orientation dependence of magnetoresistance in spin-dependent tunnel junctions
Journal
IEEE Transactions on Magnetics
Journal Volume
41
Journal Issue
2
Pages
896-898
Date Issued
2005
Author(s)
URI
Abstract
The dependence of magnetotransport on field orientation is an important issue in spintronics-related devices where the applied field is not necessarily in the ideal field-in-plane (FIP) geometry. In this study, we perform tunneling magnetoresistance (TMR) measurements on Co-Al2O3-CoFe-NiFe spin-dependent tunnel (SDT) junctions prepared at different conditions with varying field orientation ranging from FIP to field-perpendicular-to-plane (FPP). The TMR ratio decreases drastically, whereas the switching field of Co increases when the field direction is set close to FPP. Furthermore, in a situation near FPP, a peculiar TMR looping behavior is observed for one set of samples. Interface effect is thought to be related.
Subjects
Field-in-plane (FIP); Field-perpendicular-to-plane (FPP); Spin-dependent tunnel (SDT) junction; Tunneling magnetoresistance (TMR)
Other Subjects
Electric fields; Magnetoresistance; Random access storage; Roughness measurement; Sensitivity analysis; Sputtering; Field-in-plane (FIP); Field-perpendicular-to-plane (FPP); Spin-dependent tunnel (SDT) junction; Tunnel magnetoresistance (TMR); Tunnel junctions
Type
journal article