The growth and Raman spectra of boron-doped silicon nanowires
Resource
Nanotechnology, 2005. 5th IEEE Conference on
Journal
5th IEEE Conference on Nanotechnology
Pages
-
Date Issued
2005-07
Date
2005-07
Author(s)
DOI
N/A
Abstract
Boron-doped silicon nanowires, synthesized under different temperatures and pressures, have been analysed by scanning electron microscope. The pressure affects the diameters of silicon nanowires more seriously than the temperature especially when growth temperature is below 440°C. The Fano fitting results of Raman spectra and the intensity ratio of anti-Stock / Stock reveal that the Raman downshift of boron-doped silicon nanowires is smaller than the un-doped ones due to the interaction between dopants and light induced plasma. ©2005 IEEE.
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Type
journal article
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