Research and Development of millimeter-wave monolithic circuits (1/3) (2/3) (3/3)
Date Issued
2003-10-31
Date
2003-10-31
Author(s)
DOI
912219E002042
Abstract
This three-year project is proposing the
development of monolithic millimeter-wave
(MMW) components at Q-band (33-50 GHz) and
above using GaAs MMIC process technologies
(e.g. 0.15 or 0.1-μm gate-length HEMT, 2-μm
HBT), which are available through a certain
foreign commercial foundries, coordinated by
Chip Implementation Center, National Applied
Research Laboratories. The MMIC components
will include low noise amplifiers, power
amplifiers, mixers and oscillators, as well as some
passive and control components, such as MMW
switches, phase shifters, and baluns, etc.
The MMIC components development for
frequency up to Q-band (33-50 GHz) has been
demonstrated in the first year. These circuits
include 40-GHz GCPW low noise amplifier,
35-45 GHz subharmonic mixer, 35-GHz oscillator
and Q-band SPDT (single-pole-double-throw)
switch.
In the second year, we have completed the
development of a 57-60 GHz low noise amplifier,
a 54-64 GHz sub-harmonic mixer, a 54.5-59.5
GHz power amplifier, and a 15-80 GHz SPDT
switch using traveling-wave concept.
In the third year, the W-band MMICs include
77-GHz power amplifier, 84-GHz frequency
doubler, 94-GHz frequency tripler, 85-GHz
voltage control oscillator and W-band subharmonic mixer were developed. All the
MMICs have been measured.
This research utilized 0.1- and 0.15-μm
gate-length HEMT MMIC processes provided by
TRW, USA and 2-μm HBT MMIC process
provided by GCS, USA through CIC.
Subjects
Millimeter-wave
Q-band
V-band
W-band
HEMT
HBT
MMIC
Publisher
臺北市：國立臺灣大學電信工程學研究所
Type
report
File(s)![Thumbnail Image]()
Loading...
Name
912219E002042.pdf
Size
406.21 KB
Format
Adobe PDF
Checksum
(MD5):d230f8924c282da5a7ed5dbc47b1b2c7