Self-aligned inversion-channel In0.75Ga0.25As metal-oxide-semiconductor field-effect-transistors using UHV-Al 2O3/Ga2O3(Gd2O 3) and ALD-Al2O3 as gate dielectrics

Journal

Solid-State Electronics

Journal Volume

54

Journal Issue

9

Pages

919-924

Date Issued

2010

Author(s)

Lin, T.D.

Chiu, H.C.

Chang, P.

Chang, Y.H.

Wu, Y.D.

Kwo, J.

DOI

10.1016/j.sse.2010.04.033

URI

https://scholars.lib.ntu.edu.tw/handle/123456789/443384

URL

https://www.scopus.com/inward/record.uri?eid=2-s2.0-77954217397&doi=10.1016%2fj.sse.2010.04.033&partnerID=40&md5=b5812dff2fe87f794158148fdd4b86ee

SDGs

[SDGs]SDG7

Type

conference paper