Partial Parabolic Single Layer Crossing for Silicon-on-Insulator Nanophotonic Waveguides
Journal
IEEE Photonics Journal
Journal Volume
14
Journal Issue
2
Date Issued
2022
Author(s)
Abstract
Under the dimension of 6 μm overall length, a 220 nm partial parabolic taper fabricated on silicon-on-insulator (SOI) wafer with 2 μm buried oxide at 1.55 μm, to simply fabrication processes and reduce cost, we design a Partial parabolic single layer crossing, which modifies crossing curves around the crossing regions and input-output regions of crossing for fitting the initial input status of the fundamental mode. This single layer crossing for SOI photonic wires which are broadened using a 3 μm partial parabolic taper in each arm to get 97.8% high transmission (-0.097 dB) and -62 dB low crosstalk. It not only can simplify the fabrication processes, reduce cost, and shrink device size to produce more compact photonic circuits, but also keep high transmission over 96.8% even under ±10 nm fabrication dimension variation. © 2009-2012 IEEE.
Subjects
Integrated nanophotonic; waveguide devices
Other Subjects
Cost reduction; Curve fitting; Fabrication; Integrated optics; Nanophotonics; Optical signal processing; Optical waveguides; Photonic devices; Silicon photonics; Silicon wafers; Fabrication process; Integrated nanophotonic; Optical device fabrication; Optical diffractions; Optical signal-processing; Parabolics; Reduce costs; Silicon on insulator; Single layer; Waveguide device; Silicon on insulator technology
Type
journal article