A comparative molecular dynamics study of copper trench fill properties between Ta and Ti barrier layers

Resource

Materials Science in Semiconductor Processing 8 (6): 622-629

Journal

Materials Science in Semiconductor Processing

Journal Volume

8

Journal Issue

6

Pages

622-629

Date Issued

2005

Date

2005

Author(s)

Yang, J.Y.

Hong, R.T.

Huang, M.J.

URI

http://ntur.lib.ntu.edu.tw//handle/246246/106769

File(s)

Name

14.pdf

Size

320.38 KB

Format

Adobe PDF

Checksum

(MD5):a5d3b967e4630abaf65dddc5dc4770ee