A High Signal to Noise Ratio Sensing Circuit for CMOS-MEMS Gyroscope Design
Date Issued
2010
Date
2010
Author(s)
Hung, Hung-Yao
Abstract
A z-axis dual-mass CMOS-MEMS gyroscope with high signal to noise ratio capacitance sensing circuit has been designed in this research. A gyroscope chip which implemented by the TSMC 2P4M 0.35 μm CMOS-MEMS process is proposed in this design. First, the post process that confirm with the consideration of the gyroscope design will be presented. For z-axis dual-mass CMOS-MEMS gyroscope, the fully differential low-noise capacitive sensing circuit has designed and discussed. This capacitance sensing circuit can reach the performance of high signal to noise ratio by modulating the noise signal to high frequency band and then the noise would be filtered. Finally, we obtain that output signal of 9 nV/ output noise and 0.1 mV residual noise by using simulation of HSPICE. However, the sensitivity of 0.476 mV/°/s and system noise of 0.063 mV/ about all the gyroscope system are gained.
Subjects
CMOS-MEMS
MEMS
Gyroscope
high signal to noise ratio
capacitance sensing circuit
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