Strong green luminescence in quaternary InAlGaN thin films
Journal
Applied Physics Letters
Journal Volume
82
Journal Issue
9
Pages
1377-1379
Date Issued
2003
Author(s)
Feng, S.-W.
Cheng, Y.-C.
Chung, Y.-Y.
Yang, C.C.
Ma, K.-J.
Yan, C.-C.
Hsu, C.
Lin, J.Y.
Jiang, H.X.
Abstract
Strong green luminescence (around 2.37 eV) was observed in two InAlGaN thin film samples, which were originally prepared for applications in the ultraviolet range. Fourth harmonic (266 nm) of a Q-switch Nd:yttritium-aluminum-garnet laser was used as the excitation source. Observation of green luminescence was attributed to the formation of indium-rich clusters, which formed localized states in the quaternary films.
Type
journal article