Advances on III-V MOSFET for science and technology beyond Si CMOS
Journal
ECS Transactions
Journal Volume
19
Journal Issue
2
Pages
593-603
Date Issued
2009
Author(s)
Abstract
An overview is given on recent advances of science and technology of InGaAs MOS and MOSFET. Firstly, Fermi level unpinning in atomic layer deposited (ALD) oxides on InGaAs was discussed. The energy parameters in the oxides/InGaAs were determined. Secondly, we have achieved low interfacial densities of states, low electrical leakage currents, and high-temperature thermal stability. The scaling of the high κ oxides approaching 1.0 nm capacitance equivalent thickness (CET) is achieved in the Ga2O3(Gd2O 3) [GGO]/In0.2Ga0.8As (InGaAs) gate stack. Finally, we have demonstrated a self-aligned inversion-channel In 0.53Ga0.47As MOSFETs made of Al2O 3(2nm)/GGO(5nm) gate oxide and TiN metal gate at 1 (xm gate length, reaching a world record of drain current and transconductance. © The Electrochemical Society.
SDGs
Type
conference paper