Identification of embedded charge defects in suspended silicon nanowires using a carbon-nanotube cantilever gate
Journal
Applied Physics Letters
Journal Volume
99
Journal Issue
5
Date Issued
2011
Author(s)
CHIEH-HSIUNG KUAN
Lan, Y.-W.
Nguyen, L.-N.
Lai, S.-J.
Lin, M.-C.
Kuan, C.-H.
Chen, C.-D.
CHIEH-HSIUNG KUAN
Abstract
A movable carbon nanotube (CNT) cantilever gate is developed for the detection of embedded charge defects in suspended nanowires. The CNT gate is composed of a gold probe welded to a thick CNT, which is in turn attached to a thinner CNT. The rigid welding of the thicker CNT to the gold probe allows for precise placement along the measured nanowire while the joint between the thinner and thicker CNT absorbs the push and pull forces of repeated relocation. For demonstration purpose, the CNT gate determines the site of the embedded charges and measures the amount of trapped electrons. © 2011 American Institute of Physics.
Type
journal article