Performance enhancement of the nMOSFET low-noise amplifier by package strain
Journal
IEEE Transactions on Electron Devices
Journal Volume
54
Journal Issue
1
Pages
160-162
Date Issued
2007
Author(s)
Hua, W.-C.
Chang, H.-L.
Wang, T.
Lin, C.-Y.
Lin, C.-P.
Lu, S.S.
Meng, C.C.
Liu, C.W.
Abstract
The package strain improves the noise figure (NF) of the low-noise amplifier (LNA). The maximum noise reduction is ∼0.53 dB (13%) at the operating frequency of 2.4 GHz under the biaxial tensile strain of 0.037%. The NF reduction of the strained LNA is mainly due to the enhanced transconductance and cutoff frequency of the individual nMOSFET device under the same strain and bias conditions. © 2007 IEEE.
SDGs
Type
journal article