Passivation of Quantum Dot Infrared Photodetector with Al2O3 Deposited by Atomic Layer Deposition
Date Issued
2010
Date
2010
Author(s)
Lai, Po-Yang
Abstract
The purpose of this thesis is to promote the operation temperature of QDIPs. It is believed that the surface passivation by ALD can fix the surface defect such as dangling bond generated by the wet etching process (mesa formation). By this way, the dark current can be reduced and the operation temperature of QDIPs can be raised.
In the first experiment of this thesis, it is found that after coating the Al2O3 layer surrounding the device. The As2O3, the interface oxide, will pin the Fermi-level which will cause the large leakage current of the device. It could be removed by higher temperature annealing which can ensure the effective surface passivation. In the second experiment of this thesis, it is proved that the higher growth temperature of Al2O3 layer which can ensure the better quality of Al2O3 layer and higher RTA temperature make the surface passivition more effective which leads to lower dark current
In the third experiment of this thesis, the Al2O3 layer thickness effect is discussed. It is proved that the mechanism of reducing dark current only associated with interface effect. Finally, the best recipes for surface passivation on QDIPs is revealed. The operation temperature of the QDIP can be raised over 40 K and operated at 130 K.
Subjects
QDIP
quantum dot
ALD
Type
thesis
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