A General and Transformable Model Platform for Emerging Multi-Gate MOSFETs
Journal
IEEE Electron Device Letters
Journal Volume
38
Journal Issue
8
Pages
1015-1018
Date Issued
2017
Author(s)
Abstract
The complete general solution of nonlinear 1-D undoped Poisson's equation, in both Cartesian and cylindrical coordinates, is derived by employing a special variable transformation method. A general model platform for various types of emerging multi-gate MOSFETs is further constructed and verified with TCAD simulations. It is shown that this model platform is suitable for analyzing a series of emerging devices, such as double-surrounding-gate, inner-surrounding-gate, and outer-surrounding-gate nanoshell MOSFETs, all of which require different boundary conditions from the conventional gate-all-around nanowire device. ? 2017 IEEE.
Subjects
Boundary conditions; Gallium arsenide; Logic gates; Mathematical models; Mathematical transformations; Nonlinear equations; Poisson equation; Semiconductor device models; Semiconductor devices; Semiconductor insulator boundaries; Cylindrical coordinates; Different boundary condition; General solutions; MOS-FET; Multigate devices; Nanoscale device; Nanowire devices; Variable transformation; MOSFET devices
Type
journal article