The direct insulator-quantum Hall transition
Journal
Chinese Journal of Physics
Journal Volume
52
Journal Issue
4
Pages
1175-1193
Date Issued
2014
Author(s)
Lo, S.-T.
Abstract
The direct insulator-quantum Hall (I-QH) transition corresponds to a transition from an insulator to a high Landau-level-filling factor v > 2 QH state, which is characterized by an approximately temperature T-independent longitudinal resistance of a few nm thick electron (or hole) layer. In this paper, we review both the experimental and theoretical results on the direct I-QH transition. In particular, we attempt to address several interesting yet unsettled issues in the field of the direct I-Q transition. We suggest that further studies are required for obtaining a thorough understanding of the direct I-QH transition observed in nano-scale charge layers.
Type
journal article